symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 14 20 39 50 r q jc 0.8 1.5 2.5 w t a =70c 1.6 w junction and storage temperature range a p d c 100 50 -55 to 175 t c =100c i d continuous drain current b maximum units parameter t c =25c h t c =100c 30 maximum junction-to-ambient a steady-state 85 66 200 avalanche current c 30 power dissipation a t a =25c p dsm c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulsed drain current c power dissipation b t c =25c gate-source voltage drain-source voltage maximum junction-to-case d steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w a repetitive avalanche energy l=0.3mh c 135 mj AOD492 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d =85a (v gs = 10v) r ds(on) < 4.4m w (v gs = 10v) r ds(on) < 6.2m w (v gs = 4.5v) 100% uis tested! 100% rg tested! general description srfet tm AOD492 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) ,and low gate charge. this device is suitable for use as a low side fet in smp s, load switching and general purpose applications. -rohs compliant -halogen free* srfet tm g to-252 d-pak top view s bottom view d g s g d s srfet tm soft recovery mosfet: integrated schottky diode alpha & omega semiconductor, ltd. www.aosmd.com
AOD492 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.1 t j =125c 20 i gss 0.1 m a v gs(th) gate threshold voltage 1.2 1.5 2.2 v i d(on) 200 a 3.6 4.4 t j =125c 6.1 7.7 5 6.2 m w g fs 90 s v sd 0.36 0.5 v i s 85 a c iss 3760 4512 pf c oss 682 pf c rss 314 pf r g 0.75 1.5 w q g (10v) 62 74 nc q g (4.5v) 29 35 nc q gs 12 nc q gd 12 nc t d(on) 9.5 ns t r 8.5 ns t d(off) 34 ns t f 9 ns t rr 18 27 ns q rr 22 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. total gate charge v gs =10v, v ds =15v, i d =20a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time turn-on delaytime m w v gs =4.5v, i d =20a i s =1a,v gs =0v v ds =5v, i d =20a maximum body-diode + schottky diode continuous curr ent h input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v ds =v gs i d =250 m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ma v ds =0v, v gs = 20v gate-body leakage current body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=300a/ m s drain-source breakdown voltage on state drain current i d =1ma, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=300a/ m s a: the value of r ja is measured with the device in a still air enviro nment with t a =25c. the power dissipation p dsm is based on t j(max) =150 c, using t 10s junction-to-ambient thermal resistance. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max . f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse ratin g. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. h. the maximum current rating is limited by bond-wi res. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev2: sep. 2008 alpha & omega semiconductor, ltd. www.aosmd.com
AOD492 typical electrical and thermal characteristics nc 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 3.5v v gs =3.0v 6v 10v 4.5v 4.0v 8v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 2 3 4 5 6 7 8 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 30 60 90 120 150 180 210 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =20a v gs =10v v gs =4.5v 2 3 4 5 6 7 8 9 10 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AOD492 typical electrical and thermal characteristics nc 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 m 0 2 4 6 8 10 0 10 20 30 40 50 60 70 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0.00e+00 1.00e-09 2.00e-09 3.00e-09 4.00e-09 5.00e-09 6.00e-09 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (nf) c iss 80 100 120 140 160 180 200 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c alpha & omega semiconductor, ltd. www.aosmd.com
AOD492 nc typical electrical and thermal characteristics 0 20 40 60 80 100 120 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t c =25c 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 120 140 160 0.01 0.1 1 10 100 1000 pulse width (s) figure15: single pulse power rating junction-to- ambient (note g) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note g) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t c =150c t j(max ) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com
AOD492 typical electrical and thermal characteristics nc 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 temperature (c) figure 17: diode reverse leakage current vs. junction temperature i r (a) vds=12v vds=24v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 50 100 150 200 temperature (c) figure 18: diode forward voltage vs. junction temperature v sd (v) 0 8 16 24 32 40 48 0 5 10 15 20 25 30 is (a) figure 19: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 3 6 9 12 15 18 irm (a) di/dt=1000a/us 4 5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 is (a) figure 20: diode reverse recovery time and soft coefficient vs. conduction current trr (ns) 0.00 0.30 0.60 0.90 1.20 1.50 1.80 2.10 2.40 s i s =1a 10a 20a 0 8 16 24 32 40 0 200 400 600 800 1000 1200 di/dt (a) figure 21: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 3 6 9 12 15 irm (a) 4 6 8 10 12 14 16 18 0 200 400 600 800 1000 1200 di/dt (a) figure 22: diode reverse recovery time and soft coefficient vs. di/dt trr (ns) 0.00 0.50 1.00 1.50 2.00 2.50 s di/dt=1000a/us 125oc 125oc 125oc 125oc 125oc 125oc 125oc 125oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc is=20a is=20a qrr irm trr qrr irm trr s s 5a alpha & omega semiconductor, ltd. www.aosmd.com
AOD492 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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